document number: 91382 www.vishay.com s11-0440-rev. c, 14-mar-11 1 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 power mosfet sihG20N50C vishay siliconix features ? halogen-free according to iec 61249-2-21 definition ? low figure-of-merit r on x q g ? 100 % avalanche tested ? high peak current capability ? dv/dt ruggedness ? improved t rr /q rr ? improved gate charge ? high power dissipations capability ? compliant to rohs directive 2002/95/ec notes a. repetitive rating; puls e width limited by maximum junction temperature. b. v dd = 50 v, starting t j = 25 c, l = 2.5 mh, r g = 25 , i as = 17 a. c. i sd 18 a, di/dt 380 a/s, v dd v ds , t j 150 c. d. 1.6 mm from case. e. limited by maximum junction temperature. product summary v ds (v) at t j max. 560 r ds(on) ( )v gs = 10 v 0.270 q g (max.) (nc) 76 q gs (nc) 21 q gd (nc) 34 configuration single n-channel mosfet g d s to-247ac g d s ordering information package to-247ac lead (pb)-free sihG20N50C-e3 lead (pb)-free and halo gen-free sihG20N50C-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 500 v gate-source voltage v gs 30 continuous dr ain current (t j = 150 c) e v gs at 10 v t c = 25 c i d 20 a t c = 100 c 11 pulsed drain current a i dm 80 linear derating factor 1.8 w/c single pulse avalanche energy b e as 361 mj maximum power dissipation p d 250 w peak diode recovery dv/dt c dv/dt 5 v/ns operating junction and storage temperature range t j , t stg - 55 to + 150 c soldering recommendations (p eak temperature) for 10 s 300 d thermal resistance ratings parameter symbol typ. max. unit maximum junction-to-ambient r thja -40 c/w maximum junction-to-case (drain) r thjc -0.5 free datasheet http:///
www.vishay.com document number: 91382 2 s11-0440-rev. c, 14-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sihG20N50C vishay siliconix the information shown here is a preliminary product proposal, not a commercial product datasheet. vishay siliconix is not comm itted to produce this or any similar product. this information should not be used for design purpos es, nor construed as an offer to furnish or sell such products. specifications (t j = 25 c, unless otherwise noted) parameter symbol test cond itions min. typ. max. unit static drain-source brea kdown voltage v ds v gs = 0 v, i d = 250 a 500 - - v v ds temperature coefficient v ds /t j reference to 25 c, i d = 1 ma -700- mv/c gate-source threshold voltage (n) v gs(th) v ds = v gs , i d = 250 a 3.0 - 5.0 v gate-source leakage i gss v gs = 30 v - - 100 na zero gate voltage drain current i dss v ds = 500 v, v gs = 0 v - - 25 a v ds = 400 v, v gs = 0 v, t j = 125 c - - 250 drain-source on-state resistance r ds(on) v gs = 10 v i d = 10 a - 0.225 0.270 forward transconductance g fs v ds = 50 v, i d = 10 a - 6.4 - s dynamic input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1.0 mhz - 2451 2942 pf output capacitance c oss - 300 360 reverse transfer capacitance c rss -2632 total gate charge q g v gs = 10 v i d = 18 a, v ds = 400 v -6576 nc gate-source charge q gs -21- gate-drain charge q gd -29- turn-on delay time t d(on) v dd = 250 v, i d = 18 a, r g = 9.1 -80- ns rise time t r -27- turn-off delay time t d(off) -32- fall time t f -44- gate input resistance r g f = 1 mhz, open drain - 1.1 - drain-source body diode characteristics continuous source-dr ain diode current i s mosfet symbol showing the integral reverse p - n junction diode --20 a pulsed diode forward current i sm --80 body diode voltage v sd t j = 25 c, i s = 18 a, v gs = 0 v - - 1.5 v body diode reverse recovery time t rr t j = 25 c, i f = i s , di/dt = 100 a/s, v = 35 v -503-ns body diode reverse recovery charge q rr -6.7-c reverse recovery current i rrm -30-a s d g
document number: 91382 www.vishay.com s11-0440-rev. c, 14-mar-11 3 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sihG20N50C vishay siliconix typical characteristics (25 c, unless otherwise noted) fig. 1 - typical output characteristics, t c = 25 c fig. 2 - typical output characteristics, t c = 150 c fig. 3 - typical transfer characteristics fig. 4 - normalized on-resistance vs. temperature v ds , drain-to-source voltage (v) i d , drain current (a) 0 10 20 30 40 50 60 70 0612 18 24 30 7.0 v bottom to p v gs 15 v 14 v 13 v 12 v 11 v 10 v 9.0 v 8.0 v 7.0 v 6.0 v 5.0 v t j = 25 c 0 10 20 30 40 0 6 12 18 24 30 7.0 v v ds , drain-to-source voltage (v) i d , drain current (a) bottom to p v gs 15 v 14 v 13 v 12 v 11 v 10 v 9.0 v 8.0 v 7.0 v 6.0 v 5.0 v t j = 150 c i d , drain current (a) v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 5678910 t j = 150 c t j = 25 c t j , junction temperature ( c) r ds(on) , drain-to-source on resistance (normalized) 0 0.5 1 1.5 2 2.5 3 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 i d = 17 a v gs = 10 v
www.vishay.com document number: 91382 4 s11-0440-rev. c, 14-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sihG20N50C vishay siliconix fig. 5 - typical capacitance vs. drain-to-source voltage fig. 6 - typical gate charge vs. gate-to-source voltage fig. 7 - typical source-drain diode forward voltage fig. 8 - maximum safe operating area fig. 9 - maximum drain current vs. case temperature capacitance (pf) v ds , drain-to-source voltage (v) 10 10 2 10 3 10 4 10 5 1101001000 v gs = 0 v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c iss c rss c oss q g , total gate charge (nc) v gs , gate-to-source voltage (v) 0 4 8 12 16 20 0306090120 i d = 17 a v ds = 250 v v ds = 100 v v ds = 400 v v sd , source-to-drain voltage (v) i sd , reverse drain current (a) 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 t j = 150 c t j = 25 c v gs = 0 v v ds , drain-to-source voltage (v) i d , drain current (a) t c = 25 c t j = 150 c single pulse operation in this area limited by r ds(on) 1 ms 10 ms 100 s 1000 1 10 100 10 100 1000 10 000 0.1 i d , drain current (a) t c , case temperature (c) 0 5 10 15 20 25 50 75 100 125 150
document number: 91382 www.vishay.com s11-0440-rev. c, 14-mar-11 5 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sihG20N50C vishay siliconix fig. 10 - normalized thermal transien t impedance, junction-to-case (to-247) fig. 11a - switching time test circuit fig. 11b - switching time waveforms fig. 12a - unclamped inductive test circuit fig. 12b - unclamped inductive waveforms fig. 13a - basic gate charge waveform fig. 13b - gate charge test circuit 10 -4 10 -3 10 -2 0.1 1 normalized effective transient thermal impedance 0.01 0.1 1 pulse time (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 10 v + - v ds v dd v ds 90 % 10 % v gs t d(on) t r t d(off) t f r g i as 0.01 t p d.u.t l v ds + - v dd 10 v var y t p to obtain required i as i as v ds v dd v ds t p q gs q gd q g v g charge 10 v d.u.t. 3 ma v gs v ds i g i d 0.3 f 0.2 f 50 k 12 v current regulator current sampling resistors same type as d.u.t. + -
www.vishay.com document number: 91382 6 s11-0440-rev. c, 14-mar-11 this datasheet is subject to change without notice. the product described here in and this datasheet are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 sihG20N50C vishay siliconix fig. 14 - for n-channel vishay siliconix maintains worldwide manufa cturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qu alified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91382 . p.w. period di/dt diode recovery dv/dt ripple 5 % body diode forward drop re-applied voltage rever s e recovery current body diode forward current v gs = 10 v a i s d driver gate drive d.u.t. l s d waveform d.u.t. v d s waveform inductor current d = p.w. period + - + + + - - - peak dio d e recovery d v/ d t test circuit v dd ? dv/dt controlled by r g ? driver s ame type a s d.u.t. ? i s d controlled by duty factor d ? d.u.t. - device under te s t d.u.t. circuit layout con s ideration s ? low s tray inductance ? g round plane ? low leakage inductance current tran s former r g note a. v gs = 5 v for logic level device s v dd
package information www.vishay.com vishay siliconix revision: 24-sep-12 1 document number: 91360 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-247ac (high voltage) notes 1. dimensioning and tolera ncing per asme y14.5m-1994. 2. contour of slot optional. 3. dimension d and e do not include mold fl ash. mold flash shal l not exceed 0.127 mm (0.005") per side. these dimensions are mea sured at the outermost extremes of the plastic body. 4. thermal pad contour optional with dimensions d1 and e1. 5. lead finish uncontrolled in l1. 6. ? p to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. outline conforms to je dec outline to-247 with exception of dimension c. 8. xian and mingxin actually photo. millimeters inches millimeters inches dim. min. max. min. max. dim. min. max. min. max. a 4.58 5.31 0.180 0.209 d2 0.51 1.30 0.020 0.051 a1 2.21 2.59 0.087 0.102 e 15.29 15.87 0.602 0.625 a2 1.17 2.49 0.046 0.098 e1 13.72 - 0.540 - b 0.99 1.40 0.039 0.055 e 5.46 bsc 0.215 bsc b1 0.99 1.35 0.039 0.053 ? k 0.254 0.010 b2 1.53 2.39 0.060 0.094 l 14.20 16.25 0.559 0.640 b3 1.65 2.37 0.065 0.093 l1 3.71 4.29 0.146 0.169 b4 2.42 3.43 0.095 0.135 n 7.62 bsc 0.300 bsc b5 2.59 3.38 0.102 0.133 ? p 3.51 3.66 0.138 0.144 c 0.38 0.86 0.015 0.034 ? p1 - 7.39 - 0.291 c1 0.38 0.76 0.015 0.030 q 5.31 5.69 0.209 0.224 d 19.71 20.82 0.776 0.820 r 4.52 5.49 0.178 0.216 d1 13.08 - 0.515 - s 5.51 bsc 0.217 bsc ecn: x12-0167-rev. b, 24-sep-12 dwg: 5971 0.10 a c m m e e/2 (2) (4) r/2 b 2 x r s d see view b 2 x e b4 3 x b 2 x b2 l c l1 1 2 3 q d a a2 a a a1 c ? k b d m m a ?p (datum b) ?p1 d1 4 e1 0.01 b d m m view a - a thermal pad d2 dde e c c view b (b1, b3, b5) base metal c1 (b, b2, b4) section c - c, d - d, e - e (c) planting 4 3 5 7 5 5
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